Abstract
Nickel oxide (NiO) films were produced using different substrates by successive ionic layer absorption and reaction (SILAR) method. NiO films were deposited on Glass, FTO and ITO substrates, and NiO/FTO, NiO/ITO, and NiO/Glass films were obtained. The electrical properties of the films were investigated by current-voltage (I-V) characterization. The films (NiO/ITO) were characterized by Schottky diode behavior and different results than the films (NiO/FTO, NiO/Glass) which showed Ohmic behavior. In this study, sheet resistances (of the samples were in the range ∼ 0.155 - 30 KΩ, and some variables such as ideality factor ( η ) and barrier height ( fB ) values for the membranes were calculated in the range ∼14.4 - 34.4 and ∼0.57 - 0.61 eV, respectively.